1N, datasheet for 1N – SILICON 3-LAYER BILATERAL TRIGGERS provided by New Jersey Semi-Conductor Products, Inc.. 1N pdf. 1NA,AA. Leakage Current. IBeth Direction!). (Applied Voltage • 14 Voml NJ Semi-Conductors encourages customers to verify that datasheets are . 1N Datasheet: Silicon 3-Layer Bilateral Triggers, 1N PDF Download New Jersey Semiconductor, 1N Datasheet PDF, Pinouts, Data Sheet.
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1N5760 Datasheet PDF
Consult the data sheets for more detailed specifications. A 2N 2N 2N 2N Line- ups for outputs of 25 W and 35 W are also specified. Motorola offers the designer a choice of specifically designed integrated circuits for performing phase-locked loop functions, such as, phase detection, frequency division, filtering, and voltage controlled signal generation.
The following index reflects the devices characterized in this section. The low voltage devices are hermetically sealed, all-glass structure. For special applications where the devices listed may not quite fit the design requirements, special configurations can be supplied with quick turnaround time and low premiums. It is arranged to simplify first-order of linear integrated circuit device daasheet to satisfy pri- mary functions for Television, Audio, Radio, Automotive and Organ applications.
Chain 1 – As above, bu t h igher break. Motorola has developed the Uniwatt and Duowatt packages. Pin for pin compatible with TBA Low Level 2 Chips are sold in increments of ten 10 only. An electronic shutdown control and remote sensing are also provided. Linear Interface Circuits A broad spectrum of interface dahasheet will be of particular interest to microcomputer system designers.
1N Datasheet, PDF – Qdatasheet
Comparators A broad line from datadheet single supply quads to family of quad comparators with Three ; State Outputs. However, these memory ICs do not function alone. The transistors are listed in order of decreasing breakdown voltage BV CE o.
One provides watts while operating from a 28 volt supply and the other provides 80 watts from a Magnetic Memory Interface Drivers and sense amplifiers for core and plated wire memory systems. These gate arrays keep costly layout and engineering manpower to a minimum.
Limited temperature version MLMA is particularly attractive as general-purpose am- plifier due to low cost. In addition to dielectric isolation, this family of devices utilizes nichrome resistors throughout. Here are some examples of preferred device families for the more high-volume applications, and for special unique purposes. R 1 N 1 1N This series features significantly lower power dissipation when compared to standard MECL devices. This selector guide, therefore, ignores the large bulk of general-purpose, small-signal type numbers and concentrates on those transistors that have emerged as the best values in various applications categories.
Both amplifier and mixer devices datashwet included. More information concerning the device for your specific linear design needs can be obtained through your local Motorola Sales Dataseet or Motorola distributor. Often these devices possess both Linear and Digital circuitry and performance parameters. Higher speeds, lower drive, more current output devices are al- ready beginning to make their appearance on the marketplace. The voltage and current capabilities are limited only by the characteristics of the series element.
For complete design data, consult the prime device data sheet. Programmable control for variable word lengths, synchronization, and interrupt. High Current Single-phase and three-phase bridges and circuits with current ratings up to A.
The following devices are the most popular consumer amplifier transistors: Programmed by the MPU during system Initialization. The transistors are listed in decreasing order of noise figure NF.
For devices not listed, contact your nearest Motorola representative or distributor. See Appli- cation Note AN for design details. R 1N 1N