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Industrial furnace. Fig. 3 Schematic representation of the Kyropoulos method. Pull. Seed. Crucible. Crystal. Melt. Bottom heater. Thermal insulation. Side heater . The Czochralski (CZ) method of crystal growth was discovered in by Jan In the Kyropoulos method, pure alumina powder is placed in a crucible and. Kyropoulos method. The method was developed in and consists from smooth crystal growth at low temperature gradient. And lowered melt level.

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Kyropoulos process

After h after shouldering step, when the crystalline mass reaches 1. After 15 hours after the step of closing the shoulder, when the crystalline mass reaches 5 kg, at a speed O.

After the cooling step kyropouls annealing holding hours, open the intake valve, pressure in the furnace and the single crystal outside the same, closed cooling water system, crystal lid open, remove the sapphire single crystal, complete the process. Example particular embodiment of the present process is as follows: Start the vacuum system, the furnace pressure to l T3Pa. After 15 hours, the crystalline mass reaches 2 kg, O.

After 5 hours, open the intake valve, pressure in the furnace and the single crystal outside the same, closed cooling water system, crystal lid open, remove the sapphire single crystal, to complete the process. After 25 hours, the crystalline mass reaches 3. After 15 hours, the crystalline mass reaches 4.

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Kyropoulos method – consists from smooth crystal growth at low temperature gradient.

After 12 hours, open the intake valve, pressure in the furnace and the single crystal outside the same, closed cooling water system, crystal lid open, remove the sapphire single crystal, to complete metuod process.

The invention provides a Kyropoulos method for quickly growing a large-size sapphire single crystal. Processes of charging, vacuumizing, heating for melting, auxiliary temperature field adjustment, crystal leading, shoulder extending, shoulder contracting, equal-diameter growth, pull-off, cooling annealing and discharging are finished in a growth furnace of the large-size sapphire single crystal.

The Kyropoulos method for quickly growing the large-size sapphire single emthod is greatly improved on the basis of the conventional Kyropoulos method, and has the advantages of shorter growth period, larger size and higher quality of the grown crystal, higher yield of the crystal, lower unit production cost and the like. CN CNB en CN CNB en. Method for heating and melting materials in growth of sapphire single crystals by Kyropoulos method and application thereof.

Method for growing large-size kyropoulod oxide crystal through for top-seeded temperature gradient technique. Cooling method for whole kyropoulos large-sized sapphire crystal growing process.

A method of reducing the large size of the sapphire crystal bubbles Kyropoulos. Method to restrain bubbles in process of growing sapphire by using kyropoulos method. Large-size and high-quality factor carbon-doped titanium gem laser crystal and preparation method thereof. Large shoulder rotation to expand the number of kilograms of sapphire crystal pulled stable law. Sapphire crystal growing furnace heat field, crystal growing furnace with heat field and crystal growing process of crystal growing furnace.

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Kyropoulos crystal growth mono-crystal furnace crucible detachment method, temperature control method and control method.

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